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S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

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S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

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Brand Name : Hamamatsu

Model Number : S1337-1010BQ

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 1000pcs/Month

Delivery Time : 3-5work days

Packaging Details : Standard Packing

Price : Negotiable

photographic area is : 10 × 10 mm

Number of pixels : 1

Refrigeration and : Non - cooled

Encapsulated : Ceramic

Reverse voltage (Max.) : 5 V

spectral response range is190 to 1100 : 190 to 1100 nm

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Product Description:

S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

Features:

Suitable for precise photometric determination from ultraviolet to red band

Product features

High UV sensitivity: QE = 75% (λ=200 nm)

Low capacitance

Measurement condition Ta=25 ℃, Typ., Unless otherwise noted, Photosensitivity: λ=960 nm, Dark current: VR=10 mV, Rise time: VR=0 V, Terminal capacitance: VR=0 V, f=10 kHz

Specifications:

Peak sensitivity wavelength (typical value) 960 nm
Sensitivity (typical value) 0.5 A/W
Dark current (maximum) 200 pA
Rise time (typical value) 3 mu s
Junction capacitance (typical value)

1100 pF

S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance

S1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low CapacitanceS1337-1010BQ Silicon Photodiode For Precision Photometry From UV To IR Low Capacitance


Product Tags:

S1337-1010BQ

      

Large Area Avalanche Photodiode

      
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